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with ultrafast soft recovery diode IRGS4064DPBF 1 www.irf.com 02/16/12 =

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gce gate collector emitter e g n-channel c features ? low v ce (on) trench igbt technology ? low switching losses ? maximum junction temperature 175 c ? 5 s scsoa ? square rbsoa ? 100% of the parts tested for (i lm ) ? positive v ce (on) temperature coefficient. ? ultra fast soft recovery co-pak diode ? tighter distribution of parameters ? lead-free package benefits ? high efficiency in a wide range of applications ? suitable for a wide range of switching frequencies due to low v ce (on) and low switching losses ? rugged transient performance for increased reliability ? excellent current sharing in parallel operation ? low emi d 2 pak c e c g absolute maximum ratings parameter max. units v ces collector-to-emitter breakdown voltage 600 v i c @ t c = 25c continuous collector current 20 i c @ t c = 100c continuous collector current 10 i cm pulsed collector current 40 i lm clamped inductive load current 40 a i f @t c =25c diode continuous forward current 20 i f @t c =100c diode continuous forward current 10 i fm diode maximum forward current 40 continuous gate-to-emitter voltage 20 v transient gate-to-emitter voltage 30 p d @ t c =25 maximum power dissipation 101 w p d @ t c =100 maximum power dissipation 50 t j operating junction and c t stg storage temperature range soldering temperature, for 10 seconds thermal resistance parameter min. typ. max. units r ??? ??? 1.49 r ??? ??? 3.66 r . ??? ??? 40 wt weight 1.5 g c/w v ge -55 to + 175 300 (0.063 in. (1.6mm) from case)
IRGS4064DPBF 2 www.irf.com notes: v cc = 80% (v ces ), v ge = 15v, l = 28 h, r g = 22 . pulse width limited by max. junction temperature.

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$ electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions ref.fig v (br)ces collector-to-emitter breakdown voltage 600 ? ? v v ge = 0v, i c = 100 a v (br)ces / t j temperature coeff. of breakdown voltage ? 0.47 ? v/c v ge = 0v, i c = 500 a (25c-175c) ?1.6 1.91 i c = 10a, v ge = 15v, t j = 25c v ce(on) collector-to-emitter saturation voltage ? 1.9 ? v i c = 10a, v ge = 15v, t j = 150c 5,6,7,9, ?2.0 ? i c = 10a, v ge = 15v, t j = 175c 10 , 11 v ge (t h ) gate threshold voltage 4.0 ? 6.5 v v ce = v ge , i c = 275 a v ge (th) / tj threshold voltage temp. coefficient ? -11 ? mv/c v ce = v ge , i c = 1.0ma (25c - 175c) gfe forward transconductance ? 6.9 ? s v ce = 50v, i c = 10a, pw = 80 s i ce s collector-to-emitter leakage current ? ? 25 av ge = 0v, v ce = 600v ?328 ? v ge = 0v, v ce = 600v, t j = 175c 8 v fm diode forward voltage drop ? 2.5 3.1 v i f = 10a ?1.7 ? i f = 10a, t j = 175c i ge s gate-to-emitter leakage current ? ? 100 na v ge = 20v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units ref.fig q g total gate charge (turn-on) ? 21 32 i c = 10a 24 q ge gate-to-emitter charge (turn-on) ? 5.3 8.0 nc v ge = 15v ct 1 q gc gate-to-collector charge (turn-on) ? 8.9 13 v cc = 400v e on turn-on switching loss ? 29 40 i c = 10a, v cc = 400v, v ge = 15v e off turn-off switching loss ? 200 281 jr g = 22 , l = 1.0mh, t j = 25c ct 4 e total total switching loss ? 229 313 e nergy los s es include tail & diode revers e recovery t d(on) turn-on delay time ? 27 37 i c = 10a, v cc = 400v, v ge = 15v t r rise time ? 15 23 ns r g = 22 , l = 1.0mh, t j = 25c ct 4 t d(off) turn-off delay time ? 79 90 t f fall time ? 21 29 e on turn-on switching loss ? 99 ? i c = 10a, v cc = 400v, v ge = 15v 13 , 1 5 e off turn-off switching loss ? 316 ? jr g =22 , l=1.0mh, t j = 175c ct 4 e total total switching loss ? 415 ? e nergy los s es include tail & diode revers e recovery wf 1,wf 2 t d(on) turn-on delay time ? 27 ? i c = 10a, v cc = 400v, v ge = 15v 14 , 1 6 t r rise time ? 16 ? ns r g = 22 , l = 1.0mh, t j = 175c ct 4 t d(off) turn-off delay time ? 98 ? wf 1,wf 2 t f fall time ? 33 ? c ies input capacitance ? 594 ? pf v ge = 0v 22 c oes output capacitance ? 49 ? v cc = 30v c res reverse transfer capacitance ? 17 ? f = 1.0mhz t j = 175c, i c = 40a 4 rbsoa reverse bias safe operating area full square v cc = 480v, vp =600v ct 2 rg = 22 , v ge = +15v to 0v scsoa short circuit safe operating area 5 ? ? sv cc = 400v, vp =600v 22, ct 3 rg = 22 , v ge = +15v to 0v wf 4 erec reverse recovery energy of the diode ? 191 ? jt j = 175c 17 , 18 , 19 t rr diode reverse recovery time ? 62 ? ns v cc = 400v, i f = 10a 20,21 i rr peak reverse recovery current ? 16 ? a v ge = 15v, rg = 22 , l=1.0mh wf 3 ct 6 9,10,1 1, 12 conditions
IRGS4064DPBF www.irf.com 3 fig. 1 - maximum dc collector current vs. case temperature fig. 2 - power dissipation vs. case temperature fig. 4 - reverse bias soa t j = 175c; v ce = 15v fig. 5 - typ. igbt output characteristics t j = -40c; tp = 80 s fig. 6 - typ. igbt output characteristics t j = 25c; tp = 80 s fig. 3 - forward soa, t c = 25c; t j 175c 0 20 40 60 80 100 120 140 160 180 t c (c) 0 4 8 12 16 20 24 i c ( a ) 0 20 40 60 80 100 120 140 160 180 t c (c) 0 20 40 60 80 100 120 p t o t ( w ) 10 100 1000 v ce (v) 1 10 100 i c a ) 0246810 v ce (v) 0 10 20 30 40 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 0246810 v ce (v) 0 10 20 30 40 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 1 10 100 1000 v ce (v) 0.1 1 10 100 i c ( a ) 10 sec 100 sec tc = 25c tj = 175c single pulse dc 1msec
IRGS4064DPBF 4 www.irf.com fig. 9 - typical v ce vs. v ge t j = -40c fig. 7 - typ. igbt output characteristics t j = 175c; tp = 80 s fig. 10 - typical v ce vs. v ge t j = 25c fig. 8 - typ. diode forward characteristics tp = 80 s fig. 12 - typ. transfer characteristics v ce = 50v; tp = 10 s fig. 11 - typical v ce vs. v ge t j = 175c 0 5 10 15 20 v ge (v) 0 10 20 30 40 i c e ( a ) t j = 25c t j = 175c 0246810 v ce (v) 0 10 20 30 40 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 v f (v) 0 10 20 30 40 50 60 70 80 i f ( a ) -40c 25c 175c 5101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 5.0a i ce = 10a i ce = 20a 5101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 5.0a i ce = 10a i ce = 20a 5101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 5.0a i ce = 10a i ce = 20a
IRGS4064DPBF www.irf.com 5 fig. 13 - typ. energy loss vs. i c t j = 175c; l = 1mh; v ce = 400v, r g = 22 ; v ge = 15v. fig. 15 - typ. energy loss vs. r g t j = 175c; l = 1mh; v ce = 400v, i ce = 10a; v ge = 15v fig. 14 - typ. switching time vs. i c t j = 175c; l=1mh; v ce = 400v r g = 22 ; v ge = 15v fig. 16 - typ. switching time vs. r g t j = 175c; l=1mh; v ce = 400v i ce = 10a; v ge = 15v fig. 17 - typical diode i rr vs. i f t j = 175c fig. 18 - typical diode i rr vs. r g t j = 175c; i f = 10a 0 4 8 12162024 i c (a) 0 100 200 300 400 500 600 e n e r g y ( j ) e off e on 0 4 8 12 16 20 24 i c (a) 1 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 25 50 75 100 125 r g ( ) 0 50 100 150 200 250 300 350 e n e r g y ( j ) e on e off 0 25 50 75 100 125 r g ( ) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 4 8 12 16 20 24 i f (a) 0 4 8 12 16 20 24 i r r ( a ) r g = 100 r g = 10 r g = 22 r g = 47 0 25 50 75 100 125 r g ( ) 0 4 8 12 16 20 i r r ( a )
IRGS4064DPBF 6 www.irf.com fig. 20 - typical diode q rr v cc = 400v; v ge = 15v; t j = 175c fig. 19 - typical diode i rr vs. di f /dt v cc = 400v; v ge = 15v; i ce = 10a; t j = 175c fig. 24 - typical gate charge vs. v ge i ce = 10a, l=600 h fig. 23 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz fig. 22 - typ. v ge vs short circuit time v cc =400v, t c =25c fig. 21 - typical diode e rr vs. i f t j = 175c 0 200 400 600 800 1000 1200 di f /dt (a/ s) 5 10 15 20 i r r ( a ) 0 2 4 6 8 10 12 14 16 18 20 22 i f (a) 0 50 100 150 200 250 300 i r r ( a ) r g = 10 r g = 22 r g = 47 r g = 100 8 10121416 v ge (v) 0 2 4 6 8 10 12 14 16 t i m e ( s ) 0 10 20 30 40 50 60 70 80 c u r r e n t ( a ) t sc i sc 0 500 1000 1500 di f /dt (a/ s) 300 400 500 600 700 800 900 q r r ( n c ) 10 22 47 100 20a 10a 5.0a 0 4 8 12162024 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e ( v ) 300v 400v 0 20 40 60 80 100 v ce (v) 1 10 100 1000 c a p a c i t a n c e ( p f ) cies coes cres
IRGS4064DPBF www.irf.com 7 fig. 26. maximum transient thermal impedance, junction-to-case (diode) fig 25. maximum transient thermal impedance, junction-to-case (igbt) 1e-006 1e-005 0.0001 0.001 0.01 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) ? ) . . . . j j 1 1 2 2 r 1 r 1 r 2 r 2 c c ci= i / ri ri (c/w) ? ) . . . . . . . j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / = / c 4 4 r 4 r 4
IRGS4064DPBF 8 www.irf.com fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit 1k vcc dut 0 l fig.c.t.3 - s.c.soa circuit fig.c.t.4 - switching loss circuit l rg 80 v dut 480v + - fig.c.t.5 - resistive load circuit fig.c.t.6 - typical filter circuit for v (br)ces measurement
IRGS4064DPBF www.irf.com 9 fig. wf1 - typ. turn-off loss waveform @ t j = 175c using fig. ct.4 fig. wf2 - typ. turn-on loss waveform @ t j = 175c using fig. ct.4 wf.3- typ. reverse recovery waveform @ t j = 175c using ct.4 wf.4- typ. short circuit waveform @ t j = 25c using ct.3 0 100 200 300 400 500 -0.04 0.06 0.16 time( s) v ce (v) 0 2 4 6 8 10 i ce (a) 90% i ce 5% v ce 5% i ce eoff loss tf -25 50 125 200 275 350 -0.1 0.1 time ( s) v ce (v) 0 5 10 15 20 25 i ce (a) test current 90% test current 5% v ce 10% test current tr eon loss -475 -400 -325 -250 -175 -100 -25 -0.05 0.15 0.35 time ( s) v f (v) -20 -15 -10 -5 0 5 10 i f (a) peak i rr t rr q rr 10% peak irr -10 10 30 50 70 90 110 -5 0 5 10 time (us) vce (v) 0 75 150 225 300 375 450 ice ( a ) vc ic
IRGS4064DPBF 10 www.irf.com

(dimensions are shown in millimeters (inches)) dat e code year 0 = 2000 we e k 02 a = as s e mb l y s i t e code rectifier international part number p = de s i gn at e s l e ad - f r e e product (optional) f 530s in t he as s e mbly l ine "l " as s e mb l e d on ww 02, 2000 this is an irf530s wit h lot code 8024 int ernat ional logo rect ifier lot code as s e mb l y year 0 = 2000 part number dat e code line l week 02 or f530s logo assembly lot code
IRGS4064DPBF www.irf.com 11 ir world headquarters: 101n.sepulveda blvd, el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 02/2012 data and specifications subject to change without notice. this product has been designed and qualified for industrial market. qualification standards can be found on ir?s web site.
3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge.

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